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Iii V Compound Semiconductors

III   V Compound Semiconductors PDF

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Author: Tingkai Li
Publisher: CRC Press
ISBN: 1439815232
Size: 32.43 MB
Format: PDF
Category : Science
Languages : en
Pages : 603
View: 6753


Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.

Physics And Chemistry Of Iii V Compound Semiconductor Interfaces

Physics and Chemistry of III V Compound Semiconductor Interfaces PDF

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Author: Carl Wilmsen
Publisher: Springer Science & Business Media
ISBN: 1468448358
Size: 35.88 MB
Format: PDF, ePub, Docs
Category : Science
Languages : en
Pages : 465
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The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Iii V Compound Semiconductors And Devices

III   V Compound Semiconductors and Devices PDF

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Author: Keh Yung Cheng
Publisher: Springer Nature
ISBN: 3030519031
Size: 33.26 MB
Format: PDF, Docs
Category : Technology & Engineering
Languages : en
Pages : 537
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This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Iii V Compound Semiconductor Materials Growth Iee Colloquium On

III V Compound Semiconductor Materials Growth  IEE Colloquium on PDF

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Author:
Publisher:
ISBN:
Size: 27.86 MB
Format: PDF, Docs
Category :
Languages : en
Pages :
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Advances In Materials Processing And Devices In Iii V Compound Semiconductors Volume 144

Advances in Materials  Processing and Devices in III V Compound Semiconductors  Volume 144 PDF

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Author: Devendra K. Sadana
Publisher: Materials Research Society
ISBN:
Size: 77.74 MB
Format: PDF, Mobi
Category : Science
Languages : en
Pages : 714
View: 2412


The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Devices For Integrated Circuits

Devices for Integrated Circuits PDF

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Author: H. Craig Casey
Publisher: John Wiley & Sons Incorporated
ISBN:
Size: 22.21 MB
Format: PDF, Mobi
Category : Technology & Engineering
Languages : en
Pages : 512
View: 7240


This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.

Advanced Iii V Compound Semiconductor Growth Processing And Devices Volume 240

Advanced III V Compound Semiconductor Growth  Processing and Devices  Volume 240 PDF

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Author: S. J. Pearton
Publisher: Materials Research Society Sym
ISBN:
Size: 50.28 MB
Format: PDF
Category : Technology & Engineering
Languages : en
Pages : 907
View: 4582


The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

A Survey Of Ohmic Contacts To Iii V Compound Semiconductors

A Survey of Ohmic Contacts to III V Compound Semiconductors PDF

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Author:
Publisher:
ISBN:
Size: 67.62 MB
Format: PDF, ePub
Category :
Languages : en
Pages : 18
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A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g., GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n- and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A new area of contact studies is for the wide bandgap group III-Nitride materials. At present, low resistivity ohmic contact to p-type GaN has not been obtained primarily due to the large acceptor ionization energy and the resultant difficulty in achieving high free hole concentrations at room temperature. For n-type GaN, however, significant progress has been reported with reactive Ti-based metalization schemes or the use of graded InGaN layers. The present status of these approaches will be reviewed.

Controlled Oxygen Incorporation In Iii V Compound Semiconductors Grown By Metal Organic Vapor Phase Epitaxy

Controlled Oxygen Incorporation in III V Compound Semiconductors Grown by Metal organic Vapor Phase Epitaxy PDF

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Author: Jen-Wu Huang
Publisher:
ISBN:
Size: 63.28 MB
Format: PDF
Category :
Languages : en
Pages : 706
View: 2095



Fundamentals Of Iii V Semiconductor Mosfets

Fundamentals of III V Semiconductor MOSFETs PDF

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Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 9781441915474
Size: 71.15 MB
Format: PDF, Docs
Category : Technology & Engineering
Languages : en
Pages : 445
View: 2428


Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Compound Semiconductors Preparation Of Iii V Compounds

Compound Semiconductors  Preparation of III V compounds PDF

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Author: Robert K. Willardson
Publisher:
ISBN:
Size: 11.26 MB
Format: PDF, Docs
Category : Semiconductors
Languages : en
Pages :
View: 5027



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